POSSIBILITIES OF PRESENCE OF SCHLÖGL QUASICHEMICAL REACTIONS IN AN ATMOSPHERE OF OWN SILICON DEFECTS

Eugene Prokopiev

The important case of evolution of an atmosphere of own dot defects of silicon is considered. It is shown, that own interstitial atoms of silicon and to concentration of vacancies in an atmosphere of own defects of silicon presence bystable states is probably inherent in concentration , transition between which can be described Schlögl quasichemical reactions.

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